丝印：20N06C；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 100 V, 23 m, 31 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS021N10MCL − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free,

文件：325.98 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：021L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 23 m, 31 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS021N10MCL − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free,

文件：325.98 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single P-Channel -40 V, 23 m, -34.6 A

Features • NVMFWS025P04M8L − Wettable Flanks Product • Small Footprint for Compact Design 5 x 6 mm • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：199.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：025P04；Package：SO8FL；MOSFET - Power, Single P-Channel -40 V, 23 m, -34.6 A

Features • NVMFWS025P04M8L − Wettable Flanks Product • Small Footprint for Compact Design 5 x 6 mm • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：199.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 100 V, 26 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS027N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free and are R

文件：152.11 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：027L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 26 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS027N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free and are R

文件：152.11 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 100 V, 38 m, 21 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS040N10MCL − Wettable Flanks Product • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：118.31 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 100 V, 38 m, 21 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS040N10MCL − Wettable Flanks Product • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：118.31 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single P-Channel -40 V, 2.2 m, -222 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS2D3P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capab

文件：278.61 Kbytes 页数：9 Pages

ONSEMI

安森美半导体