MOSFET ??Power, Dual N-Channel 60 V, 28 m, 26 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C680NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：364.89 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C680L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 28 m, 26 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C680NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：364.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：680LWF；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 28 m, 26 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C680NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：364.89 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 80 V, 6.9 m, 74 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H840NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：253.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：6H840L；Package：DFN8；Power MOSFET 80 V, 6.9 m, 74 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H840NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：253.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：840LWF；Package：DFN8；Power MOSFET 80 V, 6.9 m, 74 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H840NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：253.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 80 V, 25.5 m, 25 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：221.87 Kbytes 页数：7 Pages

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安森美半导体

丝印：6H852L；Package：DFN8；Power MOSFET 80 V, 25.5 m, 25 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：221.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：852LWF；Package：DFN8；Power MOSFET 80 V, 25.5 m, 25 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：221.87 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 m, -234 A

Features • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 5x6mm for Space Saving and Excellent Thermal Conduction • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Load Switch • Protection: Reverse Curr

文件：172.05 Kbytes 页数：8 Pages

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安森美半导体