丝印：6H852L；Package：DFN8；Power MOSFET 80 V, 25.5 m, 25 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：221.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：6H852L；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.94 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：6H852L；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

文件：189.43 Kbytes 页数：7 Pages

ONSEMI

安森美半导体