BUK7D36-60E

Marking：6J；Package：DFN2020MD-6；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Veryfastswitching •ExtendedtemperaturerangeTj=175°C •Sid

NHUMH1

Marking：6J；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NHUMH1

Marking：6J；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNP/PNP complement: NPN/PNP complement: NHUMH111010NHUM

NHUMH1-Q

Marking：6J；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

PBSS4032PX

Marking：6J；Package：SC-62；30 V, 4.2 A PNP low VCEsat (BISS) transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *Optimizedswitchingtime *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *Smallerrequired

PESD2CANFD36LU-Q

Marking：6J；Package：PESD2CANFD36LU-Q；ESD protection for in-vehicle networks

1.Generaldescription ESDprotectiondeviceinasmallSOT323Surface-MountedDevice(SMD)plasticpackage, designedtoprotecttwoautomotivein-vehiclenetworkbuslinesfromthedamagecausedby ElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbenefits •Reversestand

PMPB12EP

Marking：6J；Package：SOT1220；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallandleadlessDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •TrenchMOSFETtechnology •Sidewetta

RT6220AGQUF

Marking：6J；Package：UQFN-16L；6A, 23V, 500kHz, ACOT® Synchronous Buck Converter

GeneralDescription TheRT6220isasynchronousBuckconverterwith AdvancedConstantOn-Time(ACOT®)modecontrol,which providesaveryfasttransientresponsewithnoexternal compensators.TheRT6220operatesfrom4.5Vto23V inputvoltage,providescompleteprotectionfunctions includi

DTA401

Marking：6J；Package：SOT-323；Bias Resistor Transistors

DTA801

Marking：6J；Package：SOT-723；Bias Resistor Transistors