General description

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NX. Features and benefits ■ Very low collector-emitter saturation voltage VCEsat ■ Optimized sw

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恩XP

丝印：6J；Package：SC-62；30 V, 4.2 A PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required

文件：741 Kbytes 页数：15 Pages

NEXPERIA

安世

30 V, 4.2 A PNP low VCEsat (BISS) transistor

文件：197.23 Kbytes 页数：15 Pages

PHI

飞利浦

30 V, 4.2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4032NX. • very low collector-emitter saturation voltage VCEsat\n• Optimized switching time\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PC;

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安世

30 V, 4.2 A PNP low VCEsat transistor

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安世

Package：TO-243AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 4.2A SOT89

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安世