6K

型号：BUK6D30-40E；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175°C •Sidewettableflanksforo

6K

型号：D20V0S1U2LP20-7；Package：U-DFN2020-2；1 CHANNEL HIGH SURGE TVS DIODE

Features •ProvidesESDProtectionperIEC61000-4-2Standard:Air±30kV,Contact±30kV •OneChannelsofESDProtection •LowChannelInputCapacitance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) Applications •CellularHa

6K

型号：DTA606；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

6K

型号：LDTA143ZET1G；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

6K

型号：LDTA143ZET1G；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

6K

型号：NHUMH13；Package：C-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

6K

型号：NHUMH13；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistors(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNP/PNP complement: NPN/PNP complement: NHUMH102.247NH

6K

型号：NHUMH13-Q；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

6K

型号：PEMH20；Package：SOT666；NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.1Generaldescription NPN/NPNresistor-equippedtransistors. 1.2Features Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts 1.3Applications Lowcurrentperipheraldriver ControlofICinputs Replacesgeneral-purposetransisto

6K

型号：PESD2CANFD36VU-Q；Package：SC-70；ESD protection for in-vehicle networks

1.Generaldescription ESDprotectiondeviceinasmallSOT323Surface-MountedDevice(SMD)plasticpackage, designedtoprotecttwoautomotivein-vehiclenetworkbuslinesfromthedamagecausedby ElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbenefits •Reversestand