丝印：6K；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Side wettable flanks for o

文件：294.17 Kbytes 页数：14 Pages

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丝印：6K；Package：U-DFN2020-2；1 CHANNEL HIGH SURGE TVS DIODE

Features • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV • One Channels of ESD Protection • Low Channel Input Capacitance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Applications • Cellular Ha

文件：204.08 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：6K；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：608.57 Kbytes 页数：16 Pages

FS

丝印：6K；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：774.3 Kbytes 页数：12 Pages

LRC

乐山无线电

丝印：6K；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：1.45259 Mbytes 页数：12 Pages

LEIDITECH

雷卯电子

丝印：6K；Package：C-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：299.18 Kbytes 页数：15 Pages

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丝印：6K；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1. General description NPN/NPN Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA PNP/PNP complement: NPN/PNP complement: NHUMH10 2.2 47 NH

文件：299.21 Kbytes 页数：15 Pages

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丝印：6K；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：306.52 Kbytes 页数：15 Pages

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丝印：6K；Package：SOT666；NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.1 General description NPN/NPN resistor-equipped transistors. 1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs 1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transisto

文件：283.32 Kbytes 页数：9 Pages

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丝印：6K；Package：SC-70；ESD protection for in-vehicle networks

1. General description ESD protection device in a small SOT323 Surface-Mounted Device (SMD) plastic package, designed to protect two automotive in-vehicle network bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. 2. Features and benefits • Reverse stand

文件：217.43 Kbytes 页数：11 Pages

NEXPERIA

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