BD5231NVX

Marking：6l；Package：SSON004R1010；Free Time Delay Setting CMOS Voltage Detector (Reset) IC

GeneralDescription ROHM'sFreeTimeDelaySettingCMOSVoltage DetectorICsarehighlyaccurate,withultra-lowcurrent consumptionfeaturethatusesCMOSprocess.Delay timesettingcanbecontrolbyanexternalcapacitor.The lineupincludesN-channelopendrainoutput(BD52xx NVX-2C)and

BUK4D16-20

Marking：6L；Package：DFN2020MD-6；20 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175°C •Sidewettableflanksforo

BZT52B15LP-7B

Marking：6L；Package：X1-DFN1006-2；SURFACE MOUNT PRECISION ZENER DIODE

Features SmallLeadlessSurfaceMountPackage IdeallySuitedforAutomatedAssemblyProcesses TightToleranceonZenerBreakdownVoltage(±2) TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3)

DTA608

Marking：6L；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LDTA124XET1G

Marking：6L；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LDTA124XET1G

Marking：6L；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

MMBF5459

Marking：6L；Package：SOT-23；N-Channel General Purpose Amplifier

N-ChannelGeneralPurposeAmplifier Thisdeviceisalowlevelaudioamplifierandswitchingtransistors,andcanbeusedforanalogswitchingapplications.SourcedfromProcess55.

NHUMH2

Marking：6L；Package：SOT363；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NHUMH2

Marking：6L；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNP/PNP complement: NPN/PNP complement: NHUMH111010NHUM

NHUMH2-Q

Marking：6L；Package：SOT363；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications