BUK4D110-20P

Marking：6N；Package：DFN2020MD-6；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175°C •TrenchMOSFETtechnology

D26V0S1U3LP20-7

Marking：6N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplications

DTA622

Marking：6N；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LDTA115EET1G

Marking：6N；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LDTA115EET1G

Marking：6N；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

NHUMD9

Marking：6N；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistors(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: PNP/PNP complement: NHUMD102.247NH

NHUMD9

Marking：6N；Package：SOT363；80 V, 100 mA NPN/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

PEMD24

Marking：6N；Package：SOT666；50 V, 20 mA NPN/PNP resistor-equipped double transistor; R1 = 100 kΩ, R2 = 100 kΩ

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistor(RET)inanultrasmallflatleadSOT666Surface- MountedDevice(SMD)plasticpackage. PNP/PNPcomplement:PEMB24 2.Featuresandbenefits •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •

UPC3237TK-E2

Marking：6N；Package：PKG；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES •Supplyvoltage:VCC=2.4to3.3V(2.8VTYP.) •Lowcurrentconsumption:ICC=5mATYP.@VCC=2.8V •LowNoise:NF=1.4dBTYP.@f=470MHz :NF=1.5dBTYP.@f=770MHz •Powergain:GP=15.3dBTYP.@f=470MHz :GP=13.5dBTYP.@f=770MHz •High-density

UPC3237TK-E2-A

Marking：6N；Package：PKG；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES •Supplyvoltage:VCC=2.4to3.3V(2.8VTYP.) •Lowcurrentconsumption:ICC=5mATYP.@VCC=2.8V •LowNoise:NF=1.4dBTYP.@f=470MHz :NF=1.5dBTYP.@f=770MHz •Powergain:GP=15.3dBTYP.@f=470MHz :GP=13.5dBTYP.@f=770MHz •High-density