型号：BUK4D110-20P；Package：DFN2020MD-6；20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Trench MOSFET technology

文件：299.85 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：D26V0S1U3LP20-7；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV  One Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications

文件：498.37 Kbytes 页数：5 Pages

DIODES

美台半导体

型号：DTA622；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：608.57 Kbytes 页数：16 Pages

FS

型号：LDTA115EET1G；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：774.3 Kbytes 页数：12 Pages

LRC

乐山无线电

型号：LDTA115EET1G；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：1.45259 Mbytes 页数：12 Pages

LEIDITECH

雷卯电子

型号：MIC5366-2.85YMT；Package：4-Pin1mmx1mmThinMLF；High-Performance Single 150mA LDO

General Description The MIC5365/6 is an advanced general purpose linear regulator offering high power supply rejection (PSRR) in an ultra-small 1mm x 1mm package. The MIC5366 includes an auto-discharge feature that is activated when the enable pin is low. The MIC5365/6 is capable of sourcing 150m

文件：532.88 Kbytes 页数：18 Pages

Microchip

微芯科技

型号：NHUMD9；Package：SOT363；80 V, 100 mA NPN/PNP resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：377.23 Kbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：NHUMD9；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

1. General description NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA NPN/NPN complement: PNP/PNP complement: NHUMD10 2.2 47 NH

文件：377.26 Kbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：PEMD24；Package：SOT666；50 V, 20 mA NPN/PNP resistor-equipped double transistor; R1 = 100 kΩ, R2 = 100 kΩ

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) in an ultra small flat lead SOT666 Surface- Mounted Device (SMD) plastic package. PNP/PNP complement: PEMB24 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces component count •

文件：246.42 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：UPC3237TK-E2；Package：PKG；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.4 to 3.3 V (2.8 V TYP.) • Low current consumption : ICC = 5 mA TYP. @ VCC = 2.8 V • Low Noise : NF = 1.4 dB TYP. @ f = 470 MHz : NF = 1.5 dB TYP. @ f = 770 MHz • Power gain : GP = 15.3 dB TYP. @ f = 470 MHz : GP = 13.5 dB TYP. @ f = 770 MHz • High-density

文件：341.6 Kbytes 页数：15 Pages

RENESAS

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