6M

型号：BUK4D60-30；Package：DFN2020MD-6；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175°C •TrenchMOSFETtechnology

6M

型号：DTA605；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

6M

型号：IP4256CZ3-M；Package：SOT883；Single and dual-channel passive filter network with ESD protection

1.1Generaldescription TheIP4256CZ3-Misasingle-channellow-passfilterwhiletheIP4256CZ5-Wand IP4256CZ6-Faredual-channelRClow-passfilters.Alldevicesprovidehigh-level ElectroStaticDischarge(ESD)protection. Thedevicesaredesignedtoprotectarangeofportablecommunication

6M

型号：LDTA123JET1G；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

6M

型号：LDTA123JET1G；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

6M

型号：MIC5366-2.8YMT；Package：4-Pin1mmx1mmThinMLF；High-Performance Single 150mA LDO

GeneralDescription TheMIC5365/6isanadvancedgeneralpurposelinearregulatorofferinghighpowersupplyrejection(PSRR)inanultra-small1mmx1mmpackage.TheMIC5366includesanauto-dischargefeaturethatisactivatedwhentheenablepinislow.TheMIC5365/6iscapableofsourcing150m

6M

型号：MMBF5485；Package：SOT-23；N-Channel RF Amplifier

N-ChannelRFAmplifier ThisdeviceisdesignedprimarilyforelectronicswitchingapplicationssuchaslowOnResistanceanalogswitching. SourcedfromProcess50.

6M

型号：MMBF5485；Package：SOT-23；SFET RF,VHF, UHF, Amplitiers

N-ChannelRFAmplifier •ThisdeviceisdesignedforRFamplifierandmixerapplications operatingupto450MHz,andforanalogswitchingrequiringlow capacitance. •Sourcedfromprocess50.

6M

型号：NHUMD3；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

6M

型号：NHUMD3；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: PNP/PNP complement: NHUMD31010NHUMH