丝印：6H858N；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 20.7 m, 32 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H858NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.58 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：6H858N；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 20.7 m, 32 A

文件：187.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体