Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL

Power MOSFET 40 V, 6.9 m, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5852NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Cap

文件：129.13 Kbytes 页数：6 Pages

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安森美半导体

Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：293.18 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：233.79 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C446L；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：233.79 Kbytes 页数：7 Pages

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安森美半导体

丝印：446LWF；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：233.79 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C446N；Package：DFN8；Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：293.18 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：446NWF；Package：DFN8；Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：293.18 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 5.4 m, 70 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：231.09 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 4.7 m, 84 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.76 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C462L；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 4.7 m, 84 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.76 Kbytes 页数：7 Pages

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安森美半导体