Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：293.18 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：233.79 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C446L；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：233.79 Kbytes 页数：7 Pages

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安森美半导体

丝印：446LWF；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：233.79 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C446N；Package：DFN8；Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：293.18 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：446NWF；Package：DFN8；Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：293.18 Kbytes 页数：7 Pages

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安森美半导体

双 N 沟道功率 MOSFET 40V，127A， 2.9mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low on resistance\n• Minimal conduction losses\n• High current capability\n• Robust load performance\n• 100% avalanche tested\n• Safeguard against voltage overstress failures\n• AEC−Q101 Qualified and PPAP Capable\n• Suitable for automotive applications\n• NVMFD5C446NWF − Wettable Flank Option;

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安森美半导体

双 N 沟道，功率 MOSFET，40V，145A，2.65mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Low rDS(on)\n• Low QG and Capacitance\n• NVMFD5C446NLWF − Wettable Flank Option\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant\n;

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安森美半导体