型号：NVMFD5C446NT1G；Package：DFN8；Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：293.18 Kbytes 页数：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

型号：NVD5C446NT4G；Package：DPAK；MOSFET ??Power, Single N-Channel 40 V, 3.5 m, 101 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：236.07 Kbytes 页数：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司