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NVMFD5C466NT1G

Marking:5C466N;Package:DFN8;MOSFET ??Power, Dual N-Channel 40 V, 8.1 m, 49 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFD5C466NWF−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Freeand

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMFS5C466NT1G

Marking:5C466N;Package:DFN5;MOSFET ??Power, Single N-Channel 40 V, 8.1 m, 49 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFS5C466NWF−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Freeand

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMFD5C466NT1G

Marking:5C466N;Package:DFN8;Power MOSFET 40 V, 8.1 m, 49 A, Dual N?묬hannel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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