丝印：5C466N；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 8.1 m, 49 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：233.11 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C466N；Package：DFN5；MOSFET ??Power, Single N-Channel 40 V, 8.1 m, 49 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C466NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：198.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C466N；Package：DFN8；Power MOSFET 40 V, 8.1 m, 49 A, Dual N?묬hannel

文件：218.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体