丝印：5C670N；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 7.0 m, 71 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C670NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

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