丝印：5C650L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 4.2 m, 111 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C650NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：233.21 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C650L；Package：DFN8；MOSFET ??Power, Dual, N-Channel 60 V, 4.2 m, 111 A

文件：231.32 Kbytes 页数：7 Pages

ONSEMI

安森美半导体