型号：GLZ5.6C；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference

文件：65.93 Kbytes 页数：6 Pages

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

型号：NTMFS5C612NT1G；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：178.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

型号：NVMFD5C650NLT1G；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 4.2 m, 111 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C650NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：233.21 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

型号：NVMFD5C668NLT1G；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 6.5 m, 68 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：230.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

型号：NVMFD5C672NLT1G；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 11.9 m, 40 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C672NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.22 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

型号：NVMFD5C674NLT1G；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 14.4 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C674NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：372.44 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

型号：NVMFD5C680NLT1G；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 28 m, 26 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C680NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：364.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

型号：NVMFS5C604NT1G；Package：DFN5；MOSFET - Power, Single N-Channel 60 V, 1.2 m, 288 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C604NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.49 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

型号：NVMFS5C645NT1G；Package：DFN5；MOSFET - Power, Single N-Channel, DFN5/DFNW5 60 V, 4.6 m, 92 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C645NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：237.87 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

型号：NVMFS5C670NT1G；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 7.0 m, 71 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C670NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：179.45 Kbytes 页数：7 Pages

ONSEMI

安森美半导体