NVMFD5852NLWFT1G中文资料安森美半导体数据手册PDF规格书

Power MOSFET

40 V, 6.9 m, 44 A, Dual N−Channel Logic Level, Dual SO−8FL

特性 Features

• Small Footprint (5x6 mm) for Compact Designs

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• NVMFD5852NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

• This is a Pb−Free Device