MOSFET ??Power, Dual N-Channel 40 V, 5.4 m, 70 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：231.09 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 4.7 m, 84 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.76 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C462L；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 4.7 m, 84 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.76 Kbytes 页数：7 Pages

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安森美半导体

丝印：462LWF；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 4.7 m, 84 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.76 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C462N；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 5.4 m, 70 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：231.09 Kbytes 页数：7 Pages

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安森美半导体

丝印：462NWF；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 5.4 m, 70 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：231.09 Kbytes 页数：7 Pages

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安森美半导体

功率 MOSFET，40V，70A，5.4mΩ，双 N 沟道，逻辑电平

Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low on resistance\n• Minimal conduction losses\n• High current capability\n• Robust load performance\n• 100% avalanche tested\n• Safeguard against voltage overstress failures\n• AEC-Q101 Qualified\n• Suitable for automotive applications;

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安森美半导体

包装：卷带（TR）卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：40V 5.4 MOHM T8 S08FL DUA

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安森美半导体