MOSFET - Power, Single N-Channel, DFN5/DFNW5 30 V, 4.8 m, 55 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C308NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

文件：241.34 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, DFN5/DFNW5 30 V, 4.8 m, 55 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C308NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

文件：241.34 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, DFN5/DFNW5 30 V, 4.8 m, 55 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C308NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

文件：241.34 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 51 A, Single N?묬hannel, SO?? FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：121.31 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 51 A, Single N?묬hannel, SO?? FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：121.31 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 51 A, Single N?묬hannel, SO?? FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：121.31 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single P-Channel -60 V, 14 m, -64 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFS5113PLWF − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：189.03 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single P-Channel -60 V, 14 m, -64 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFS5113PLWF − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：189.03 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：V5113L；Package：DFN5；MOSFET ??Power, Single P-Channel -60 V, 14 m, -64 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFS5113PLWF − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：189.03 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：M6060P；Package：DFNX6-8L；P-Channel Enhancement Mode Power MOSFET

Application Load Switch Power management in portable/desktop PCs DC/DC conversion

文件：2.98776 Mbytes 页数：5 Pages

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