Power MOSFET 80 V, 6.9 m, 74 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H840NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：253.76 Kbytes 页数：8 Pages

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安森美半导体

丝印：6H840L；Package：DFN8；Power MOSFET 80 V, 6.9 m, 74 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H840NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：253.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：840LWF；Package：DFN8；Power MOSFET 80 V, 6.9 m, 74 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H840NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：253.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual N-Channel Power MOSFET 80 V, 74 A, 6.9 mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• NVMFS5C410NLWF − Wettable Flank Option\n• Enhanced OpticalInspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• RoHS Compliant;

ONSEMI

安森美半导体