MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 m, 71 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

文件：201.94 Kbytes 页数：8 Pages

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MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 m, 71 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

文件：201.94 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 m, 71 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

文件：201.94 Kbytes 页数：8 Pages

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安森美半导体

Power MOSFET 30V, 116A, 3.4 mΩ, Single N-Channel, SO8-FL, Logic Level.

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low RDS (on) Resistance\n• Low Capacitance\n• AEC-Q101 qualified\n• Wettable flank (WF) option - NVMFS4C306NWF\n• Low gate charge\n• minimzes switching losses;

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安森美半导体