MOSFET - Power, Single P-Channel -40 V, 2.7 m, -183 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS3D0P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capab

文件：248 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：3D0P04；Package：DFN5；MOSFET - Power, Single P-Channel -40 V, 2.7 m, -183 A

Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS3D0P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capab

文件：248 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET, Single P-Channel, -40 V, 2.7 mΩ, -183 A

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. • Small Footprint (5x6 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• LFPAK4 Package, Industry Standard\n• AEC−Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant;

ONSEMI

安森美半导体

QFN8

ON

上传：深圳市鼎欣微电子有限公司

8-PowerTDFN

ON

上传：深圳市广弘电子有限公司