Power MOSFET 30 V, 1.15 m, 241 A, Single N?묬hannel Logic Level, SO??FL

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C302NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, H

文件：132.4 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 30 V, 1.15 m, 241 A, Single N?묬hannel Logic Level, SO??FL

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C302NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, H

文件：132.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 1.15 m, 241 A, Single N?묬hannel Logic Level, SO??FL

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C302NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, H

文件：132.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Single N−Channel Logic Level Power MOSFET 30 V, 241 A, 1.15 mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Low RDS(on)\n• Low QG and Capacitance\n• NVMFS4C302NWF − Wettable Flanks Option\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

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安森美半导体