MOSFET ??Power, Single, N-Channel 60 V, 7.0 m, 71 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C670NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：179.45 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C670N；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 7.0 m, 71 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C670NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：179.45 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：670NWF；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 7.0 m, 71 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C670NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：179.45 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 15.0 m, 36 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C677NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C677L；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 15.0 m, 36 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C677NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：677LWF；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 15.0 m, 36 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C677NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 27.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFS5C680NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：186.51 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C680L；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 27.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFS5C680NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：186.51 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：680LWF；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 27.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFS5C680NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：186.51 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, DFN5/DFNW5 60 V, 1.3 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：196.51 Kbytes 页数：8 Pages

ONSEMI

安森美半导体