MOSFET ??Power, Single N-Channel 60 V, 15.0 m, 36 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C677NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.36 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C677L；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 15.0 m, 36 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C677NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.36 Kbytes 页数：7 Pages

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安森美半导体

丝印：677LWF；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 15.0 m, 36 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C677NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.36 Kbytes 页数：7 Pages

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安森美半导体

功率 MOSFET，单 N 沟道，60 V，36 A，15.0 mΩ

Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Gate capacitance\n• Minimize Switching Losses\n• Industry standard 5 x 6 mm package Industry\n• Compact Design and Standard footprint for direct drop-in\n• Best in-class FOM (RDS(ON) x QG)\n• Increased efficiency, lower power dissipation\n• N;

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安森美半导体