MOSFET ??Power, Single N-Channel 60 V, 27.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFS5C680NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：186.51 Kbytes 页数：7 Pages

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丝印：5C680L；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 27.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFS5C680NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：186.51 Kbytes 页数：7 Pages

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安森美半导体

丝印：680LWF；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 27.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFS5C680NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：186.51 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET,N-Channel, 60 V, 21 A, 27.5 mΩ

Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Gate capacitance\n• Minimize Switching Losses\n• Industry standard 5 x 6 mm package Industry\n• Compact Design and Standard footprint for direct drop-in\n• Best in-class FOM (RDS(ON) x QG)\n• Increased efficiency, lower power dissipation\n• N;

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安森美半导体