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NTD20N06T4G

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

文件:80.12 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

NTD20N06T4G

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

文件:162.77 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NTD20N06T4G

N-Channel 6 0-V (D-S) MOSFET

文件:897.18 Kbytes 页数:6 Pages

VBSEMI

微碧半导体

NTDV20N06T4G

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total Gate Charge • Lower and Tighter VSD

文件:162.77 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NTDV20N06T4G

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

文件:162.77 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NTDV20N06T4G

N-Channel 60-V (D-S) MOSFET

文件:896.96 Kbytes 页数:6 Pages

VBSEMI

微碧半导体

详细参数

  • 型号:

    NTD20N06T4G

  • 功能描述:

    MOSFET 60V 20A N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON/安森美
25+
TO-252
37729
ON/安森美全新特价NTD20N06T4G即刻询购立享优惠#长期有货
询价
ON
2024+
TO-252
25000
绝对全新原装,现货热卖
询价
ON(安森美)
23+
TO-252-3
13274
公司只做原装正品,假一赔十
询价
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
NK/南科功率
9420
TO252
36520
国产南科平替供应大量
询价
onsemi
25+
DPAK-3 (TO-252-3)
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ON
2016+
TO-252
10000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ON
17+
TO-252
6200
询价
ON
24+/25+
8855
原装正品现货库存价优
询价
ON
24+
5000
询价
更多NTD20N06T4G供应商 更新时间2026-2-4 21:09:00