MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

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ONSEMI

安森美半导体

N-Channel Power MOSFET 100 V, 17 A, 81 m

文件：142.81 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 81mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

TO252

ON

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TO92

NTE

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