Silicon NPN Transistor High Frequency Amplifier

Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise and fall times less than 2.5ns.

文件：22.9 Kbytes 页数：2 Pages

NTE

Bi-Polar transistor Selector Guide

NTE

Integrated Circuit TV Video Processor

Features: • For Reverse AGC • Sufficient Gain and Quieting Sensitivity • Stable Gain Over the Wide Band • Small Wave Distortion with AGC

文件：19.33 Kbytes 页数：2 Pages

NTE

Integrated Circuit Audio Power Amplifier, 4.8W

Integrated Circuit Audio Power Amplifier, 4.8W

文件：78.43 Kbytes 页数：1 Pages

NTE

Integrated Circuit FM IF Amplifier

Description: The NTE1082 is a silicon monolithic integrated circuit intended for usa as a three−stage FM IF amplifier having exceptionally high voltage gain and limiting characteristics. From pin 1 the stabilized voltage can be applied to the mixer stage.

文件：77.39 Kbytes 页数：2 Pages

NTE

Integrated Circuit Hybrid, Dual High Gain Pre−Amplifier

Integrated Circuit Hybrid, Dual High Gain Pre−Amplifier

文件：82.74 Kbytes 页数：1 Pages

NTE

Integrated Circuit Low Noise Audio Preamp

Features: • Low Noise: VNI = 0.8µVrms(Typ) • High Open Loop Voltage Gain: GVO = 92dB (Typ) • Low Distortion: THD = 0.1 (Max) at VOUT = 7Vrms, GV = 40dB, f= 1kHz

文件：18.15 Kbytes 页数：2 Pages

NTE

Integrated Circuit Low Noise Preamp

Description: • General–Purpose Pre–Amplifier • Voltage Amplifier Application • Low Noise • Operates from a Wide Range of Power Supplies • High Voltage Gain

文件：18 Kbytes 页数：2 Pages

NTE

Bi-Polar transistor Selector Guide

NTE

Integrated Circuit Audio Power Amplifier, 4.8W

NTE