首页 >NGTB30N120IHRWG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NGTB30N120IHRWG | IGBT with Monolithic Free Wheeling Diode | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NGTB30N120IHRWG | 包装：散装 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 60A 384W TO247 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
1200V,30ATrenchIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
1200V,30ATrenchIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DiscreteIGBT(High-SpeedVseries)1200V/30A | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
DiscreteIGBT(High-SpeedVseries)1200V/30A | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30A-1200V-shortcircuitruggedIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
30A,1200VshortcircuitruggedIGBTwithUltrafastdiode Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH™p | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30A,1200VN-ChannelIGBT Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
1200VFieldStopTrenchIGBT | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBTwithmonolithicbodydiodeforsoftswitchingApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M | IXYS IXYS Integrated Circuits Division | IXYS | ||
HighVoltageIGBTwithoptionalDiode | IXYS IXYS Integrated Circuits Division | IXYS | ||
HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage HighVoltageIGBTwithoptionalDiodeISOPLUS™package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features •NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability - | IXYS IXYS Integrated Circuits Division | IXYS |
产品属性
- 产品编号：
NGTB30N120IHRWG
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
散装
- IGBT 类型：
沟槽型场截止
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.5V @ 15V，30A
- 开关能量：
700µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
-/230ns
- 测试条件：
600V，30A，10 欧姆，15V
- 工作温度：
-40°C ~ 175°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商器件封装：
TO-247
- 描述：
IGBT 1200V 60A 384W TO247
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSemiconductor |
18+ |
NA |
3347 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
ON |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ON Semiconductor |
22+ |
TO247 |
9000 |
原厂渠道,现货配单 |
询价 | ||
ON Semiconductor |
23+ |
TO247 |
9000 |
原装正品，支持实单 |
询价 | ||
ON Semiconductor |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ON |
2021 |
N/A |
6000 |
询价 | |||
ON-安森美 |
24+25+/26+27+ |
TO-247-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
onsemi |
24+ |
TO-247-3 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
ON Semiconductor |
23+ |
TO247 |
8000 |
只做原装现货 |
询价 |
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