NGTG50N60FLWG

IGBT，PFC，高频率，50 A，600 V; Low Saturation Voltage using Trench with Field Stop Technology\nReduces System Power Dissipation\nLow Switching Loss Reduces System Power Dissipation\nOptimized for High Speed Switching\n5µs Short Circuit Capability\n;

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

NGTG50N60FLWG

Insulated Gate Bipolar Transistor (IGBT)

NGTG50N60FLWG

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 50A TO247

NGTG50N60FWG

InsulatedGateBipolarTransistor(IGBT)

PJM50N60TE

N-ChannelPowerMOSFET

RM50N60DF

N-ChannelEnhancementModePowerMOSFET