Field stop trench technology

General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Features • Fi

文件：588.2 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 60A 339W TO247

ONSEMI

安森美半导体

Discrete IGBT (High-Speed V series) 1200V / 30A

文件：559.44 Kbytes 页数：6 Pages

FUJI

富士通

Discrete IGBT (High-Speed V series) 1200V / 30A

文件：651.14 Kbytes 页数：8 Pages

FUJI

富士通

75A, 1200V, NPT Series N-Channel IGBT

The HGTG30N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bip

文件：113.21 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体