75A, 1200V, NPT Series N-Channel IGBT

The HGTG30N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bip

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FAIRCHILD

仙童半导体

75A, 1200V, NPT Series N-Channel IGBT

ONSEMI

安森美半导体

30 A - 1200 V - short circuit rugged IGBT

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STMICROELECTRONICS

意法半导体

30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 μs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ p

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STMICROELECTRONICS

意法半导体

75A, 1200V, NPT Series N-Channel IGBT

The HGTG30N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bip

文件：81.32 Kbytes 页数：7 Pages

INTERSIL