30 A - 1200 V - short circuit rugged IGBT

文件：359.23 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30N120KD；Package：TO-247；30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 μs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ p

文件：423.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

30 A - 1200 V - short circuit rugged IGBT

ST

意法半导体

30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 μs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ p

文件：423.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

75A, 1200V, NPT Series N-Channel IGBT

The HGTG30N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bip

文件：81.32 Kbytes 页数：7 Pages

Intersil

30A, 1200V N-Channel IGBT

Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOS FET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varie

文件：40.5 Kbytes 页数：5 Pages

Intersil