NGTG30N60FWG

IGBT, 600 V, 30 A, PFC, Low Frequency

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.; Optimized for Very Low VCEsat\nReduces System Power Dissipation\nLow Switching Loss\n5µs Short Circuit Capability\n;

NGTG30N60FWG

Insulated Gate Bipolar Transistor (IGBT)

NGTG30N60FWG

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 167W TO247

RLFGB30N60CT

IGBT

Features ◼600V,30A ◼VCE(sat)(typ.)=1.9V@VGE=15V,IC=30A ◼Highspeedswitching ◼Highersystemefficiency ◼Softcurrentturn-offwaveforms GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS,generalinverter andothersoftswi

RLGB30N60CT

IGBT

Features 600V,30A VCE(sat)(typ.)=1.9V@VGE=15V,IC=30A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS,generalinverter andothersoftswitchingapp

RLPGB30N60CT

IGBT

Features 600V,30A VCE(sat)(typ.)=1.9V@VGE=15V,IC=30A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS,generalinverter andothersoftswitchingapp