NGTG30N60FWG数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

特性 Features

Optimized for Very Low VCEsat
Reduces System Power Dissipation
Low Switching Loss
5µs Short Circuit Capability

应用 Application

Solar InvertersMotor DrivesUninterruptible Power Supplies (UPS)

简介

NGTG30N60FWG属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NGTG30N60FWG晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。