NGTG30N60FLWG中文资料IGBT，PFC，高频率，30 A，600 V数据手册ONSEMI规格书

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

特性 Features

Low Saturation Voltage using Trench with Field Stop Technology
Reduces System Power Dissipation
Low Switching Loss Reduces System Power Dissipation
Optimized for High Speed Switching
5µs Short Circuit Capability

简介

NGTG30N60FLWG属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NGTG30N60FLWG晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。