NGTB60N65FL2中文资料IGBT，650V，60A，场截止 2 IGBT数据手册ONSEMI规格书

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

特性 Features

• Extremely Efficient Trench with Field Stop Technology
• Tjmax = 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5µs Short-Circuit Capability
• These are Pb-Free Devices

应用 Application

• Half bridge inverter
• T-Type inverter
• I-Type inverter
• Uninterrupted Power supplies (Offline UPS and Online UPS)
• Solar Inverters / PV inverters
• Motor Control

简介

NGTB60N65FL2属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NGTB60N65FL2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。