NGTB45N60S1中文资料IGBT，600 V/45 A - 焊接数据手册ONSEMI规格书

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.

特性 Features

TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5µ s Short−Circuit Capability

简介

NGTB45N60S1属于分立半导体产品的晶体管-UGBT、MOSFET-单。由ONSEMI制造生产的NGTB45N60S1晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。