NGTB40N120S3中文资料IGBT，1200V，40A，低 VF FSIII数据手册ONSEMI规格书

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
low switching losses. The IGBT is well suited for applications that
require fast switching IGBT with low VF diodes, e.g. phase−shifted full
bridge, etc. Incorporated into the device is a free wheeling diode with a
low forward voltage.

特性 Features

• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Low VF Reverse Diode
• Optimized for High Speed Switching
• These are Pb−Free Devices

应用 Application

• Welding
• Uninterruptible Power Inverter Supplies (UPS)
• Motor Control
• Industrial

简介

NGTB40N120S3属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NGTB40N120S3晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。