NGTB30N135IHR数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

特性 Features

• Extremely Efficient Trench with Fieldstop Technology
• Optimized for Low Case Temperature in IH Cooker Applications
• Reliable and Cost Effective Single Die Solution

应用 Application

• Inductive Heating

简介

NGTB30N135IHR属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NGTB30N135IHR晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。