NGTB15N60S1数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.

特性 Features

• Low Saturation Voltage Resulting in Low Conduction Loss
• Low Switching Loss in Higher Frequency Applications
• Soft Fast Reverse Recovery Diode
• 5µs Short Circuit Capability
• Excellent Current versus Package Size Performance Density
• AC and DC Motor Control

应用 Application

• Appliance Motor Control
• General Purpose Inverter
• White Goods

简介

NGTB15N60S1属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NGTB15N60S1晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。