NGTB35N60FL2数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage

特性 Features

• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5µs Short−Circuit Capability

应用 Application

• Solar Inverters
• Uninterruptible Power Supplies (UPS)

简介

NGTB35N60FL2属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NGTB35N60FL2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。