NGTB30N65IHL2中文资料IGBT 650V 30A FS2 电感加热数据手册ONSEMI规格书

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.

特性 Features

• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses in IH Cooker Application
• TJmax = 175°C
• Soft, Fast Free Wheeling Diode

应用 Application

• Inductive Heating
• Soft Switching

简介

NGTB30N65IHL2属于分立半导体产品的晶体管-UGBT、MOSFET-单。由ONSEMI制造生产的NGTB30N65IHL2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。