NGTB40N60L2中文资料IGBT, 600V 40A FS2 Low VCEsat数据手册ONSEMI规格书

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.

特性 Features

• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for Low VCEsat
• 5 s Short−Circuit Capability

应用 Application

• Motor Drive Inverters
• Industrial Switching
• Welding

简介

NGTB40N60L2属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NGTB40N60L2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。