NGTD13T65F2数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss.

特性 Features

• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Optimized for High Speed Switching
• 10 \u0002µs Short Circuit Capability
• These are Pb−Free Devices

应用 Application

• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding

简介

NGTD13T65F2属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NGTD13T65F2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。