L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz • High associated gain Ga = 13.5 dB TYP. at f = 2 GHz • Gate width : Wg = 400 Pm • 4 pins super mini mold • Tape & reel packaging only available

文件：51.65 Kbytes 页数：8 Pages

NEC

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GaAs MES FET

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz • High associated gain Ga = 13.5 dB TYP. at f = 2 GHz • Gate width : Wg = 400 Pm • 4 pins super mini

文件：187.52 Kbytes 页数：10 Pages

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GaAs MES FET

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz • High associated gain Ga = 13.5 dB TYP. at f = 2 GHz • Gate width : Wg = 400 Pm • 4 pins super mini

文件：187.52 Kbytes 页数：10 Pages

RENESAS

瑞萨

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz • High associated gain Ga = 13.5 dB TYP. at f = 2 GHz • Gate width : Wg = 400 Pm • 4 pins super mini mold • Tape & reel packaging only available

文件：51.65 Kbytes 页数：8 Pages

NEC

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GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：65.72 Kbytes 页数：10 Pages

NEC

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GaAs MES FET

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitabl

文件：193.89 Kbytes 页数：12 Pages

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz fre

文件：52.61 Kbytes 页数：4 Pages

NEC

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz fre

文件：52.61 Kbytes 页数：4 Pages

NEC

瑞萨

GaAs MES FET

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitabl

文件：193.89 Kbytes 页数：12 Pages

RENESAS

瑞萨

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：65.72 Kbytes 页数：10 Pages

NEC

瑞萨