GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz fre

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION\nNE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequ

Renesas

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz fre

文件：52.61 Kbytes 页数：4 Pages

NEC

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GaAs MES FET

L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. FEATURES • Low noise figure & High associated gain NF = 0.8 dB TY

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RENESAS

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