GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

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NEC

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz fre

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NEC

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GaAs MES FET

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitabl

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RENESAS

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

Renesas

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